University of Virginia & IBM Watson Research Center

  1. ull, R. and Stach, E. A., Equilibrium and metastable strained layer semiconductor heterostructures. Current Opinion in Solid State & Materials Science 1 (1), 21-28 (1996) 10.1016/s1359-0286(96)80005-2
  2. Lanzerotti, L. D., Sturm, J. C., Stach, E., Hull, R., Buyuklimanli, T. and Magee, C., Suppression of boron transient enhanced diffusion in SiGe heterojunction bipolar transistors by carbon incorporation. Applied Physics Letters 70 (23), 3125-3127 (1997) 10.1063/1.119110
  3. Hull, R., Demarest, J., Dunn, D., Stach, E. A. and Yuan, Q., Applications of ion microscopy and in situ electron microscopy to the study of electronic materials and devices. Microscopy and Microanalysis 4 (3), 308-316 (1998) 10.1017/s143192769898031x
  4. Stach, E. A., Hull, R., Bean, J. C., Jones, K. S. and Nejim, A., In situ studies of the interaction of dislocations with point defects during annealing of ion implanted Si/SiGe/Si (001) heterostructures. Microscopy and Microanalysis 4 (3), 294-307 (1998) 10.1017/s1431927698980308
  5. Stach, E. A., Hull, R., Tromp, R. M., Reuter, M. C., Copel, M., LeGoues, F. K. and Bean, J. C., Effect of the surface upon misfit dislocation velocities during the growth and annealing of SiGe/Si (001) heterostructures. Journal of Applied Physics 83 (4), 1931-1937 (1998) 10.1063/1.366984
  6. Hull, R., Stach, E. A., Tromp, R., Ross, F. and Reuter, M., Interactions of moving dislocations in semiconductors with point, line and planar defects. Physica Status Solidi a-Applied Research 171 (1), 133-146 (1999) 10.1002/(sici)1521-396x(199901)171:1<133::Aid-pssa133>3.0.Co;2-d
  7. Moore, K. T., Howe, J. M., Veblen, D. R., Murray, T. M. and Stach, E. A., Analysis of electron intensity as a function of aperture size in energy-filtered transmission electron microscope imaging. Ultramicroscopy 80 (3), 221-236 (1999) 10.1016/s0304-3991(99)00115-1
  8. Stach, E. A., Hull, R., Tromp, R. M., Ross, F. M., Reuter, M. C. and Bean, J. C., In-situ transmission electron microscopy studies of the interaction between dislocations in strained SiGe/Si(001) heterostructures. Philosophical Magazine a-Physics of Condensed Matter Structure Defects and Mechanical Properties 80 (9), 2159-2200 (2000) 10.1080/01418610008212156
  9. Stach, E. A., Kelsch, M., Nelson, E. C., Wong, W. S., Sands, T. and Cheung, N. W., Structural and chemical characterization of free-standing GaN films separated from sapphire substrates by laser lift-off. Applied Physics Letters 77 (12), 1819-1821 (2000) 10.1063/1.1309030
  10. Stach, E. A., Schwarz, K. W., Hull, R., Ross, F. M. and Tromp, R. M., New mechanism for dislocation blocking in strained layer epitaxial growth. Physical Review Letters 84 (5), 947-950 (2000) 10.1103/PhysRevLett.84.947
  11. Stach, E. A. and Hull, R., Enhancement of dislocation velocities by stress-assisted kink nucleation at the native oxide/SiGe interface. Applied Physics Letters 79 (3), 335-337 (2001) 10.1063/1.1384904