- ull, R. and Stach, E. A., Equilibrium and metastable strained layer semiconductor heterostructures. Current Opinion in Solid State & Materials Science 1 (1), 21-28 (1996) 10.1016/s1359-0286(96)80005-2
- Lanzerotti, L. D., Sturm, J. C., Stach, E., Hull, R., Buyuklimanli, T. and Magee, C., Suppression of boron transient enhanced diffusion in SiGe heterojunction bipolar transistors by carbon incorporation. Applied Physics Letters 70 (23), 3125-3127 (1997) 10.1063/1.119110
- Hull, R., Demarest, J., Dunn, D., Stach, E. A. and Yuan, Q., Applications of ion microscopy and in situ electron microscopy to the study of electronic materials and devices. Microscopy and Microanalysis 4 (3), 308-316 (1998) 10.1017/s143192769898031x
- Stach, E. A., Hull, R., Bean, J. C., Jones, K. S. and Nejim, A., In situ studies of the interaction of dislocations with point defects during annealing of ion implanted Si/SiGe/Si (001) heterostructures. Microscopy and Microanalysis 4 (3), 294-307 (1998) 10.1017/s1431927698980308
- Stach, E. A., Hull, R., Tromp, R. M., Reuter, M. C., Copel, M., LeGoues, F. K. and Bean, J. C., Effect of the surface upon misfit dislocation velocities during the growth and annealing of SiGe/Si (001) heterostructures. Journal of Applied Physics 83 (4), 1931-1937 (1998) 10.1063/1.366984
- Hull, R., Stach, E. A., Tromp, R., Ross, F. and Reuter, M., Interactions of moving dislocations in semiconductors with point, line and planar defects. Physica Status Solidi a-Applied Research 171 (1), 133-146 (1999) 10.1002/(sici)1521-396x(199901)171:1<133::Aid-pssa133>3.0.Co;2-d
- Moore, K. T., Howe, J. M., Veblen, D. R., Murray, T. M. and Stach, E. A., Analysis of electron intensity as a function of aperture size in energy-filtered transmission electron microscope imaging. Ultramicroscopy 80 (3), 221-236 (1999) 10.1016/s0304-3991(99)00115-1
- Stach, E. A., Hull, R., Tromp, R. M., Ross, F. M., Reuter, M. C. and Bean, J. C., In-situ transmission electron microscopy studies of the interaction between dislocations in strained SiGe/Si(001) heterostructures. Philosophical Magazine a-Physics of Condensed Matter Structure Defects and Mechanical Properties 80 (9), 2159-2200 (2000) 10.1080/01418610008212156
- Stach, E. A., Kelsch, M., Nelson, E. C., Wong, W. S., Sands, T. and Cheung, N. W., Structural and chemical characterization of free-standing GaN films separated from sapphire substrates by laser lift-off. Applied Physics Letters 77 (12), 1819-1821 (2000) 10.1063/1.1309030
- Stach, E. A., Schwarz, K. W., Hull, R., Ross, F. M. and Tromp, R. M., New mechanism for dislocation blocking in strained layer epitaxial growth. Physical Review Letters 84 (5), 947-950 (2000) 10.1103/PhysRevLett.84.947
- Stach, E. A. and Hull, R., Enhancement of dislocation velocities by stress-assisted kink nucleation at the native oxide/SiGe interface. Applied Physics Letters 79 (3), 335-337 (2001) 10.1063/1.1384904