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EELS map of a Ga-doped AlScN ferroelectric thin-film device cross-section
Featured · March 2026

Low-voltage ferroelectric FETs with ultrathin AlScN and 2D channels

Working with the Jariwala and Olsson groups, a recent Device (Cell Press) article demonstrates that ultrathin Al1−xScxN can enable low-voltage ferroelectric switching — essential for future energy-efficient computing paradigms.

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